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| DF005S THRU DF10S Features * Glass Passivated Die Construction * Diffused Junction * Low Forward Voltage Drop, High Current Capability * Surge Overload Rating to 50A Peak * Designed for Surface Mount Application * Plastic Material - UL Flammability Classification 94V-0 L CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts G AB DE H J C DF -S Dim Min 7.40 6.20 0.22 0.076 1.02 8.13 2.40 5.00 1.00 Max 7.90 6.50 0.30 0.33 10.40 1.53 8.51 2.60 5.20 1.20 Mechanical Data * Case : Molded Plastic * Terminals : Solder Plated Leads, Solderable per MIL-STD-202, Method 208 * Polarity : As Marked on Case * Approx Weight : 0.38 grams * Mounting Position : Any * Marking : Type Number K A B C D E G H J K L A ll Dimens ions in mm Maximum Ratings And Electrical Characteristics (Ratings at 25E ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Symbols Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse voltage Average Rectified Output Current @ TA=40E VRMM VRWM VR VRMS Io IFSM VFM IRM I2t Cj ReJA Tj TSTG DF 005S 50 35 DF 01S 100 70 DF 02S 200 140 DF 04S 400 280 1.0 50 1.1 10 500 10.4 25 40 -65 to +150 DF 06S 600 420 DF 08S 800 560 DF 10S 1000 700 Units Volts Volts Amp Amp Volts i A A2S pF E /W E Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage (per element) @ IF=1.0 A @ TA=25E Peak Reverse Current at Rated DC Blocking Voltage (per element) @ TA=100E I2t Rating for Fusing (t<8.3ms) Typical Junction Capacitance per element (Note 1) Typical Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Notes: (1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. (2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas. RATING AND CHARACTERISTIC CURVES DF005S THRU DF10S (A) 1.0 (A) 60 Hz Resistive or Inductive load 10 T j = 25C Pulse Width = 300s 2% duty cycle I F , INST ANT ANEOUS FOR WARD CURRENT FOR WARD CURRENT 1.0 0.5 I (AV) , AVERAGE 0.1 0 40 60 80 100 120 140 0.01 0.4 0.6 0.8 1.0 1.2 1.4 T A , AMBIENT TEMPERA TURE (C) Fi g. 1 Output Current Deratin g Curve V F , INST ANT ANEOUS FOR WARD VOL TAGE (V) Fi g. 2 Typ Forward Characteristics (per element) 100 (A) 60 Single half-sine-W ave (JEDEC Method) CURRENT 50 C J , CAP ACIT ANCE (pF) T j = 25c f = 1.0 Mhz V sig = 50 mV p-p I FSM , PEAK FOR WARD SURGE 40 30 10 20 10 0 1 10 100 1 1 10 100 NUMBER OF CYCLES AT 60 Hz Fi g. 3 Max Non-Repetitive Peak Forward Sur ge Current 100 V R , REVERSE VOL TAGE (V) Fi g. 4 Typ Junction Capacitance (per element ) (A) CURRENT T j = 125C 10 I R , INST ANT ANEOUS REVERSE 1.0 0.1 T j = 25C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RA TED PEAK REVERSE VOL TAGE (%) Fi g. 5 Typ Reverse Characteristics (per element ) |
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